igbt module ( n series ) n n features ? square rbsoa ? low saturation voltage ? less total power dissipation ? improved fwd characteristic ? minimized internal stray inductance ? overcurrent limiting function (~3 times rated current) n n applications ? high power switching ? a.c. motor controls ? d.c. motor controls ? uninterruptible power supply n n outline drawing n n maximum ratings and characteristics ? absolute maximum ratings ( t c =25c ) items symbols ratings units collector-emitter voltage v ces 600 v gate -emitter voltage v ges 20 v continuous i c 600 collector 1ms i c pulse 1200 current continuous -i c 600 1ms -i c pulse 1200 max. power dissipation p c 2000 w operating temperature t j +150 c storage temperature t stg -40 ~ +125 c isolation voltage a.c. 1min. v is 2500 v mounting *1 3.5 screw torque terminals *2 4.5 nm terminals *3 1.7 note: *1:recommendable value; 2.5 ~ 3.5 nm (m5) or (m6) *2:recommendable value; 3.5 ~ 4.5 nm (m6) *3:recommendable value; 1.3 ~ 1.7 nm (m4) ? electrical characteristics ( at t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =600v 4.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 60 a gate-emitter threshold voltage v ge(th) v ge =20v i c =600ma 4.5 7.5 v collector-emitter saturation voltage v ce(sat) v ge =15v i c =600a 2.8 v input capacitance c ies v ge =0v 39600 output capacitance c oes v ce =10v 8800 pf reverse transfer capacitance c res f=1mhz 4000 t on v cc =300v 0.6 1.2 t r i c =600a 0.2 0.6 t off v ge = 15v 0.6 1.0 t f r g =2.7 w 0.2 0.35 diode forward on-voltage v f i f =600a v ge =0v 3.0 v reverse recovery time t rr i f =600a 300 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j-c) igbt 0.063 thermal resistance r th(j-c) diode 0.11 c/w r th(c-f) with thermal compound 0.0125 n equivalent circuit turn-on time turn-off time s a
0 200 400 600 800 1000 10 100 1000 t f t r t off t on switching time vs. collector current v cc =300v, r g =2.7 w , v ge 15v, t j =25c switching time : t on , t r , t off , t f [nsec] collector current : i c [a] 0 1 2 3 4 5 0 200 400 600 800 1000 1200 1400 10v v ge =20v,15v,12v, collector-emitter voltage : v ce [v] collector current : i c [a] 8v collector current vs. collector-emitter voltage t j =125c 0 1 2 3 4 5 0 200 400 600 800 1000 1200 1400 collector current vs. collector-emitter voltage t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 8v 10v v ge =20v,15v,12v 0 5 10 15 20 25 0 2 4 6 8 10 collector-emitter vs. gate-emitter voltage t j =25c 300a 600a 1200a i c = collector-emitter voltage :v ce [v] gate-emitter voltage : v ge [v] 0 5 10 15 20 25 0 2 4 6 8 10 collector-emitter vs. gate-emitter voltage t j =125c 300a 600a 1200a i c = collector-emitter voltage v ce [v] gate-emitter voltage : v ge [v] 0 200 400 600 800 1000 10 100 1000 switching time vs. collector current v cc =300v, r g =2.7 w , v ge =15v, t j =125c t f t r t on t off switching time : t on , t r , t off , t f [nsec] collector current : i c [a]
0,001 0,01 0,1 1 0,01 0,1 igbt diode transient thermal resistance thermal resistance : r th(j-c) [c/w] pulse width : pw [sec] 0 500 1000 1500 2000 2500 3000 3500 0 100 200 300 400 500 400v 300v v cc =200v 0 5 10 15 20 25 dynamic input characteristics t j =25c collector-emitter voltage : v ce [v] gate charge : q g [nc] 1 10 10 100 1000 tf tr toff ton switching time vs. r g v cc =300v, i c =600a, v ge =15v, t j =25c switching time : t on , t r , t off , t f [nsec] gate resistance : r g [ w ] 0 1 2 3 4 0 200 400 600 800 1000 1200 1400 t j =125c 25c forward current vs. forward voltage v ge =ov forward current : i f [a] forward voltage : v f [v] 0 200 400 600 800 1000 100 i rr 25c t rr 25c t rr 125c i rr 125c reverse recovery characteristics t rr , i rr vs. i f reverse recovery current : i rr [a] reverse recovery time : t rr [nsec] forward current : i f [a] 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 6000 rbsoa (repetitive pulse) scsoa (non-repetitive pulse) reversed biased safe operating area +v ge =15v, -v ge < 15v, t j < 125c, r g > 2.7 w collector current : i c [a] collector-emitter voltage : v ce [v] gate-emitter voltage : v ge [v]
0 5 10 15 20 25 30 35 1 10 100 c res c oes c ies capacitance vs. collector-emitter voltage t j =25c capacitance : c ies , c oes , c res [nf] collector-emitter voltage : v ce [v] 0 200 400 600 800 1000 0 10 20 30 40 50 60 e rr 25c e rr 125c switching loss vs. collector current v cc =300v, r g =2.7 w , v ge =15v switching loss : e on , e off , e rr [mj/cycle] collector current : i c [a] e on 25c e on 125c e off 25c e off 125c fuji electric gmbh fuji electric (uk) ltd. lyoner stra?e 26 commonwealth house 2 chalkhill road hammersmith d-60528 frankfurt/m london w6 8dw, uk tel. : 069 - 66 90 29 - 0 tel. : 0181 - 233 11 30 fax. : 069 - 66 90 29 - 56 fax. : 0181 - 233 11 60 p.o. box 702708-dallas, tx 75370 phone (972) 233-1589 fax (972) 233-0481 www.collmer.com
|
